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| SMD Type Power MOSFET KTHD3100C IC IC Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Provides Great Thermal Characteristics Trench P-Channel for Low On Resistance Low Gate Charge N-Channel for Test Switching Absolute Maximum Ratings Ta = 25 Parameter Drain-source voltage Gate-source voltage Drain current Continuous *1 TA = 25 TA = 85 t 10S IDM PD t 5S TJ, Tstg IS TL R JA Symbol VDSS VGSS N-Channel 20 12 2.9 P-Channel Unit V 8.0 -3.2 -2.3 -4.4 -13 1.1 3.1 -55 to 150 2.5 260 113 60 V ID 2.1 3.9 12 A Drain current Pulsed t = 10 s *1 Total power dissipation A W W Operating and Storage Temperature Range Source Current (Body Diode) Lead Temperature for Soldering Purposes Junction-to-Ambient *1 Steady State t 10S A /W *1 Surface Mounted on FR4 board using 1 in sq pad size www.kexin.com.cn 1 SMD Type KTHD3100C Electrical Characteristics Ta = 25 Parameter Drain-source breakdown voltage Symbol V(BR) DSS Testconditons ID=250 A,VGS=0V ID=-250 A,VGS=0V VDS=16V,VGS=0V Zero gate voltage drain current IDSS VDS=16V,VGS=0V,TJ = 25 VDS=-16V,VGS=0V VDS=-16V,VGS=0V,TJ = 125 Gate?to?Source Leakage Current Gate threshold voltage *1 Static drain-source on-state resistance *1 Static drain-source on-state resistance *1 Forward Transconductance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Threshold Gate Charge Gate?to?Source Gate Charge Gate?to?Drain "Miller" Charge Turn-on delay time Rise time Turn-off delay time *1 Fall time *1 IGSS VGS (th) RDS (on) RDS (on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD td (on) tr td (off) tf VDS = 0 V, VGS = VDS = 0 V, VGS = 12 V 8V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDS=-10V,VGS=0V,f=1MHz VGS = 4.5 V, VDS = 10 V, ID = 2.9 A VGS =-4.5 V, VDS = -10 V, ID =-3.2 A VGS = 4.5 V, VDS = 10 V, ID = 2.9 A VGS =-4.5 V, VDS = -10 V, ID =-3.2 A VGS = 4.5 V, VDS = 10 V, ID = 2.9 A VGS =-4.5 V, VDS =-10 V, ID =-3.2 A VGS = 4.5 V, VDS = 10 V, ID = 2.9 A VGS =-4.5 V, VDS =-10 V, ID =-3.2 A ID=2.9A,VDD=10V ID=-3.2A,VDD=-10V N-Channel VGS=4.5V,RG=2.5 *2 P-Channel VGS=-4.5V,,RG=2.5 *2 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch IS=2.5 A,VGS=0V IS=-2.5 A,VGS=0 V N-Ch P-Ch 0.6 -0.45 58 77 64 85 6.0 8.0 165 680 80 100 25 70 2.3 7.4 0.2 0.6 0.4 1.4 0.7 2.5 6.3 5.8 10.7 11.7 9.6 16 1.5 12.4 0.8 -0.8 1.15 -1.2 Min 20 -20 1 5.0 -1 -5 100 100 1.2 -1.5 80 115 80 110 Typ Max IC IC Unit V A nA V m m S pF pF pF VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID=2.9A,VGS=4.5A ID=2.3A,VGS=2.5V ID=-3.2A,VGS=-4.5V ID=-2.2A,VGS=-2.5V ID=2.9A,VDS=10V ID=-3.2A,VDS=-10V N-Channel VDS=10V,VGS=0V,f=1MHz nC ns ns ns ns Forward Voltage *1 VSD V 2 www.kexin.com.cn SMD Type KTHD3100C Electrical Characteristics Ta = 25 Parameter Symbol trr N-Channel Reverse Recovery Time ta VGS = 0 V,dIS/dt = 100 A/ s,IS=1.5 A Testconditons N-Ch P-Ch N-Ch P-Ch tb P-Channel VGS = 0 V,dIS/dt = 100 A/ Reverse Recovery Storage Charge *1 Pulse Test: Pulse Width 250 QRR s, Duty Cycle 2%. s,IS=?1.5A N-Ch P-Ch N-Ch P-Ch Min Typ 12.5 13.5 9 9.5 3.5 4 6 6.5 Max IC IC Unit ns nC *2 Switching characteristics are independent of operating junction temperature. www.kexin.com.cn 3 |
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